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Title: Solitary pulse-on-demand production by optical injection locking of passively Q-switched InGaN diode laser near lasing threshold

In this letter, we investigate the behavior of a Q-switched InGaN multi-section laser diode (MSLD) under optical injection from a continuous wave external cavity diode laser. We obtain solitary optical pulse generation when the slave MSLD is driven near free running threshold, and the peak output power is significantly enhanced with respect to free running configuration. When the slave laser is driven well above threshold, optical injection reduces the peak power. Using standard semiconductor laser rate equation model, we find that both power enhancement and suppression effects are the result of partial bleaching of the saturable absorber by externally injected photons.
Authors:
; ; ; ;  [1] ; ; ;  [2]
  1. Centre Suisse d'Electronique et de Microtechnique SA (CSEM), CH-2002 Neuchâtel (Switzerland)
  2. Institute of Condensed Matter Physics (ICMP), École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne (Switzerland)
Publication Date:
OSTI Identifier:
22412639
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 7; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; BLEACHING; GALLIUM NITRIDES; INDIUM COMPOUNDS; PEAK LOAD; PHOTONS; Q-SWITCHING; REACTION KINETICS; SEMICONDUCTOR LASERS; SOLITONS