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Title: On the AlGaInP-bulk and AlGaInP/GaAs-superlattice confinement effects for heterostructure-emitter bipolar transistors

The confinement effect and electrical characteristics of heterostructure-emitter bipolar transistors with an AlGaInP bulk-confinement layer and an AlGaInP/GaAs superlattice-confinement layer are first demonstrated and compared by experimentally results. In the two devices, the relatively large valence band discontinuity at AlGaInP/GaAs heterojunction provides excellent confinement effect for holes to enhance current gain. As to the AlGaInP/GaAs superlattice-confinement device, part of thermionic-emission electrons will be trapped in the GaAs quantum wells of the superlattice. This will result in lower collector current and current gain as compared with the bulk-confinement device. Nevertheless, the superlattice-confinement device exhibits a larger current-gain cutoff frequency, which can be attributed that the tunneling behavior is included in the carrier transportation and transporting time across the emitter region could be substantially reduced.
Authors:
 [1]
  1. Department of Electronic Engineering, National Kaohsiung Normal University, 116 Ho-ping 1st Road, Kaohsiung 802, Taiwan (China)
Publication Date:
OSTI Identifier:
22412628
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 6; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; COMPARATIVE EVALUATIONS; CONFINEMENT; ELECTRONS; GAIN; GALLIUM ARSENIDES; HETEROJUNCTIONS; HOLES; LAYERS; QUANTUM WELLS; SUPERLATTICES; THERMIONIC EMISSION; TRANSISTORS; TRAPPING; TUNNEL EFFECT; VALENCE