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Title: Gate-modulated weak anti-localization and carrier trapping in individual Bi{sub 2}Se{sub 3} nanoribbons

We report a gate-voltage modulation on the weak anti-localization of individual topological insulator Bi{sub 2}Se{sub 3} nanoribbons. The phase coherence length decreases with decreasing the carrier density of the surface states on the bottom surface of the Bi{sub 2}Se{sub 3} nanoribbon as tuning the gate voltage from 0 to −100 V, indicating that the electron-electron interaction dominates the decoherence at low carrier density. Furthermore, we observe an abnormal conductance decline at positive gate voltage regime, which is ascribed to the capture of surface carriers by the trapping centers in the surface oxidation layer.
Authors:
;  [1] ; ;  [1] ;  [2]
  1. State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871 (China)
  2. (China)
Publication Date:
OSTI Identifier:
22412620
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 6; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BISMUTH SELENIDES; CAPTURE; CARRIER DENSITY; CHARGE CARRIERS; COHERENCE LENGTH; ELECTRIC POTENTIAL; ELECTRON-ELECTRON COUPLING; LAYERS; NANOSTRUCTURES; OXIDATION; SURFACES; TRAPPING