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Title: Electron beam induced current profiling of the p-ZnO:N/n-GaN heterojunction

The high quality p-n structures studied consist of nitrogen doped ZnO:N films grown by plasma assisted molecular beam epitaxy on n-type GaN templates. The nitrogen concentration, determined by secondary ion mass spectroscopy, is about 1 × 10{sup 20} cm{sup −3}. Temperature dependent photoluminescence studies confirm the presence of acceptor centers with an energy level lying approximately 130 meV above the valence band. The maximum forward-to-reverse current ratio I{sub F}/I{sub R} in the obtained p-n diodes is about 10{sup 7} at ±5 V, which is 2–5 orders of magnitude higher than previously reported for this type of heterojunctions. Electron-beam-induced current measurements confirm the presence of a p–n junction, located at the p-ZnO/n-GaN interface. The calculated diffusion length and activation energy of minority carriers are presented. The heterostructures exhibit strong absorption in the UV range with a four orders of magnitude high bright-to-dark current ratio.
Authors:
; ; ; ;  [1]
  1. Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw (Poland)
Publication Date:
OSTI Identifier:
22412612
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 6; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ACTIVATION ENERGY; CONCENTRATION RATIO; DIFFUSION LENGTH; DOPED MATERIALS; ENERGY LEVELS; FILMS; GALLIUM NITRIDES; HETEROJUNCTIONS; INTERFACES; ION MICROPROBE ANALYSIS; MASS SPECTROSCOPY; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; P-TYPE CONDUCTORS; SCANNING ELECTRON MICROSCOPY; TEMPERATURE DEPENDENCE; VALENCE; ZINC OXIDES