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Title: Resistive switching properties in CdZnTe films

The ternary II–VI compound semiconductor cadmium zinc telluride (CdZnTe) has bi-stable conduction characteristics. In this letter, CdZnTe films are grown on indium tin oxide (ITO) substrates by radio frequency magnetron sputtering. The current-voltage characteristics show that there is resistive switching in a structure consisting of an 800-nm-thick CdZnTe film, an Au Schottky contact, and an ITO bottom electrode. The electroresistance in Au/CdZnTe/ITO may be related to the polarization of the CdZnTe film and the Schottky contact.
Authors:
; ; ;  [1] ;  [2]
  1. State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi'an 710072 (China)
  2. Department of Materials Science and Engineering, Beijing Institute of Petrochemical Technology, Beijing 102617 (China)
Publication Date:
OSTI Identifier:
22412611
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 6; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CADMIUM COMPOUNDS; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; ELECTRODES; FILMS; GOLD; INDIUM COMPOUNDS; POLARIZATION; RADIOWAVE RADIATION; SEMICONDUCTOR MATERIALS; SPUTTERING; SUBSTRATES; TIN OXIDES; ZINC TELLURIDES