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Title: Effects of localization on hot carriers in InAs/AlAs{sub x}Sb{sub 1–x} quantum wells

The temperature dependence of a InAs/AlAs{sub 0.84}Sb{sub 0.16} multi-quantum-well sample is studied using continuous wave photoluminescence. An “s-shape” shift in peak energy is observed and attributed to low energy localization states. High incident power density photoluminescence measurements were performed to probe the nature of such localization. The results opposed the possibility of a type-II band structure and supported the idea of low energy localization states. The effect of such localization on hot carriers in our system was studied and an improvement in their stability due to hole mobility at elevated temperature is presented.
Authors:
; ; ; ; ; ;  [1]
  1. Homer L. Dodge, Department of Physics and Astronomy, University of Oklahoma, 440 W. Brooks St., Norman, Oklahoma 73019 (United States)
Publication Date:
OSTI Identifier:
22412600
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 6; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; ALUMINIUM ARSENIDES; ANTIMONIDES; ELECTRONIC STRUCTURE; HOLE MOBILITY; INDIUM ARSENIDES; PHASE STABILITY; PHOTOLUMINESCENCE; POWER DENSITY; PROBES; QUANTUM WELLS; TEMPERATURE DEPENDENCE