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Title: Structure determination of the clean (001) surface of strained Si on Si{sub 1−x}Ge{sub x}

The surface structure of the strained Si(001) (thickness of 20 nm) on Si{sub 1−x}Ge{sub x} (x = 0.1, 0.2, and 0.3) was studied by low-energy electron diffraction (LEED). LEED intensity-energy spectra of the 2 × 1 reconstructed clean surfaces showed a systematic change that indicates the lattice contraction along the [001] direction remains even at the surfaces. The atomic structures were quantitatively determined, and they were compared with the unstrained pristine Si. The differences in the atomic position almost follow the difference in the bulk lattice constant determined by X-ray diffraction measurements. The results indicate that the strain produced at the Si/Si{sub 1−x}Ge{sub x} interface remains unchanged up to the surface layer.
Authors:
 [1] ;  [2] ;  [3] ;  [1]
  1. Institute for Solid State Physics, University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581 (Japan)
  2. (Japan)
  3. Graduate School of Materials Science, Nara Institute of Science and Technology, Takayama, Ikoma, Nara 630-0192 (Japan)
Publication Date:
OSTI Identifier:
22412597
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 6; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; COMPARATIVE EVALUATIONS; CONCENTRATION RATIO; CRYSTAL STRUCTURE; ELECTRON DIFFRACTION; ENERGY SPECTRA; GERMANIUM SILICIDES; INTERFACES; LATTICE PARAMETERS; LAYERS; SILICON; STRAINS; SURFACES; X-RAY DIFFRACTION