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Title: BiasMDP: Carrier lifetime characterization technique with applied bias voltage

A characterization method is presented, which determines fixed charge and interface defect densities in passivation layers. This method bases on a bias voltage applied to an electrode on top of the passivation layer. During a voltage sweep, the effective carrier lifetime is measured by means of microwave detected photoconductivity. When the external voltage compensates the electric field of the fixed charges, the lifetime drops to a minimum value. This minimum value correlates to the flat band voltage determined in reference impedance measurements. This correlation is measured on p-type silicon passivated by Al{sub 2}O{sub 3} and Al{sub 2}O{sub 3}/HfO{sub 2} stacks with different fixed charge densities and layer thicknesses. Negative fixed charges with densities of 3.8 × 10{sup 12 }cm{sup −2} and 0.7 × 10{sup 12 }cm{sup −2} are determined for Al{sub 2}O{sub 3} layers without and with an ultra-thin HfO{sub 2} interface, respectively. The voltage and illumination dependencies of the effective carrier lifetime are simulated with Shockley Read Hall surface recombination at continuous defects with parabolic capture cross section distributions for electrons and holes. The best match with the measured data is achieved with a very low interface defect density of 1 × 10{sup 10 }eV{sup −1} cm{sup −2} for the Al{sub 2}O{submore » 3} sample with HfO{sub 2} interface.« less
Authors:
; ;  [1] ;  [1] ;  [2]
  1. Nanoelectronic Materials Laboratory gGmbH (NaMLab), Nöthnitzer Straße 64, 01187 Dresden (Germany)
  2. (Germany)
Publication Date:
OSTI Identifier:
22412595
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 6; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM OXIDES; CAPTURE; CARRIER LIFETIME; CHARGE DENSITY; CORRELATIONS; CROSS SECTIONS; ELECTRIC FIELDS; ELECTRIC POTENTIAL; ELECTRONS; HAFNIUM OXIDES; HOLES; IMPEDANCE; INTERFACES; LAYERS; MICROWAVE RADIATION; PASSIVATION; PHOTOCONDUCTIVITY; RECOMBINATION; SILICON