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Title: Graphene/ferroelectrics/graphene hybrid structure: Asymmetric doping of graphene layers

We report graphene/ferroelectric/graphene hybrid structure to demonstrate an asymmetrical doping in two graphene layers, one side with electrons and another side with holes. Two ferroelectrics, a poly(vinylidenefluoride) (PVDF) and a hydrofluorinated graphene, were used to demonstrate the concept with density functional calculations, revealing the Fermi level shift of 0.35 and 0.75 eV, respectively. This concept was confirmed by Raman spectroscopy using graphene/poly(vinylidenefluoride-co-trifluoroethylene) (P(VDF-TrFE))/graphene hybrid, which can easily form β-phase close to our simulation model. G-band peak position was downshifted for electron doping and upshifted for hole doping. This hybrid structure opens an opportunity to study bilayer graphene system with a controllable thickness for a wide range of high carrier concentration.
Authors:
;  [1] ;  [2] ;  [1] ;  [3]
  1. IBS Center for Integrated Nanostructure Physics, Institute for Basic Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)
  2. Department of Chemistry, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)
  3. (Korea, Republic of)
Publication Date:
OSTI Identifier:
22412582
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 24; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ASYMMETRY; DENSITY FUNCTIONAL METHOD; ELECTRONS; FERMI LEVEL; FERROELECTRIC MATERIALS; GRAPHENE; HOLES; LAYERS; ORGANIC FLUORINE COMPOUNDS; POLYVINYLS; RAMAN SPECTROSCOPY; SIMULATION