Formation and coarsening of near-surface Ga nanoparticles on SiN{sub x}

Journal Article · Mon Jun 15 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4922454· OSTI ID:22412580

Canniff, J. C.; Jeon, S.; Huang, S.; Goldman, R. S. ^[1]

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1. Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States)

We have investigated the formation and coarsening of near-surface Ga nanoparticles (NPs) in SiN{sub x} using Ga{sup +} focused-ion-beam-irradiation of SiN{sub x}, followed by rapid thermal annealing. For surfaces with minimal curvature, diffusive growth is apparent, leading to nearly close packed arrays with NP diameters as small as 3 nm and densities as high as ∼4 × 10{sup 12} cm{sup −2}. The diffusive flux increases with annealing temperature, leading to NP coarsening by Ostwald ripening. For surfaces with increased curvature, diffusion towards the valleys also increases during annealing, leading to Ga NP coalescence and a bi-modal distribution of NP sizes.

• OSTI ID: 22412580
• Journal Information: Applied Physics Letters, Vol. 106, Issue 24; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
COALESCENCE
GALLIUM
GALLIUM IONS
ION BEAMS
IRRADIATION
NANOPARTICLES
SILICON NITRIDES