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Title: Enhanced light extraction of scintillator using large-area photonic crystal structures fabricated by soft-X-ray interference lithography

Soft-X-ray interference lithography is utilized in combination with atomic layer deposition to prepare photonic crystal structures on the surface of Bi{sub 4}Ge{sub 3}O{sub 12} (BGO) scintillator in order to extract the light otherwise trapped in the internal of scintillator due to total internal reflection. An enhancement with wavelength- and emergence angle-integration by 95.1% has been achieved. This method is advantageous to fabricate photonic crystal structures with large-area and high-index-contrast which enable a high-efficient coupling of evanescent field and the photonic crystal structures. Generally, the method demonstrated in this work is also suitable for many other light emitting devices where a large-area is required in the practical applications.
Authors:
; ; ; ; ;  [1] ; ; ; ; ;  [2]
  1. Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China)
  2. Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai Synchrotron Radiation Facility, Shanghai 201800 (China)
Publication Date:
OSTI Identifier:
22412575
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 24; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; BISMUTH GERMANATES; CRYSTAL STRUCTURE; INTERFERENCE; PHOSPHORS; SOFT X RADIATION; TRAPPING