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Title: Thin-layer black phosphorous/GaAs heterojunction p-n diodes

Owing to its high carrier mobility and thickness-tunable direct band gap, black phosphorous emerges as a promising component of optoelectronic devices. Here, we evaluate the device characteristics of p-n heterojunction diodes wherein thin black phosphorous layers are interfaced with an underlying, highly n-doped GaAs substrate. The p-n heterojunctions exhibit close-to-ideal diode behavior at low bias, while under illumination they display a photoresponse that is evenly distributed over the entire junction area, with an external quantum efficiency of up to 10% at zero bias. Moreover, the observed maximum open circuit voltage of 0.6 V is consistent with the band gap estimated for a black phosphorous sheet with a thickness on the order of 10 nm. Further analysis reveals that the device performance is limited by the structural quality of the black phosphorous surface.
Authors:
; ; ;  [1] ;  [1] ;  [2]
  1. Max Planck Institute for Solid State Research, Heisenbergstrasse 1, D-70569 Stuttgart (Germany)
  2. (Switzerland)
Publication Date:
OSTI Identifier:
22412567
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 23; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CARRIER MOBILITY; DOPED MATERIALS; ELECTRIC POTENTIAL; GALLIUM ARSENIDES; HETEROJUNCTIONS; LAYERS; OPTOELECTRONIC DEVICES; PHOSPHORUS; P-N JUNCTIONS; QUANTUM EFFICIENCY; SUBSTRATES; THIN FILMS