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Title: In operandi observation of dynamic annealing: A case study of boron in germanium nanowire devices

We report on the implantation of boron in individual, electrically contacted germanium nanowires with varying diameter and present a technique that monitors the electrical properties of a single device during implantation of ions. This method gives improved access to study the dynamic annealing ability of the nanowire at room temperature promoted by its quasi-one-dimensional confinement. Based on electrical data, we find that the dopant activation efficiency is nontrivially diameter dependent. As the diameter decreases, a transition from a pronounced dynamic-annealing to a radiation-damage dominated regime is observed.
Authors:
;  [1] ;  [2] ;  [3] ; ;  [1] ; ;  [4] ;  [2]
  1. Department of Physics, Chair for Applied Physics, Friedrich-Alexander University Erlangen-Nürnberg (FAU), Staudtstr. 7, 91058 Erlangen (Germany)
  2. (CRANN), and AMBER at CRANN, Trinity College Dublin, College Green, Dublin 2 (Ireland)
  3. (Ireland)
  4. Materials Chemistry and Analysis Group, Department of Chemistry, Tyndall Institute, University College Cork, Cork (Ireland)
Publication Date:
OSTI Identifier:
22412566
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 23; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; BORON; ELECTRIC CONTACTS; ELECTRICAL PROPERTIES; GERMANIUM; NANOWIRES; PHYSICAL RADIATION EFFECTS; TEMPERATURE RANGE 0273-0400 K