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Title: Photon energy dependence of photo-induced inverse spin-Hall effect in Pt/GaAs and Pt/Ge

We report the photon energy dependence of photo-induced inverse spin Hall effect (ISHE) in Pt/GaAs and Pt/Ge Schottky junctions. The experimental results are compared with a spin drift-diffusion model, which highlights the role played by the different spin lifetime in the two semiconductors, in determining the energy dependence of the ISHE signal detected in the Pt layer. The good qualitative agreement between experiments and modelling indicates that photo-induced ISHE can be used as a tool to characterize spin lifetime in semiconductors.
Authors:
; ; ; ;  [1]
  1. LNESS-Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano (Italy)
Publication Date:
OSTI Identifier:
22412555
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 23; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ELECTRIC CONTACTS; ENERGY DEPENDENCE; GALLIUM ARSENIDES; GERMANIUM; HALL EFFECT; LAYERS; PHOTONS; PLATINUM; SEMICONDUCTOR MATERIALS; SIMULATION; SPIN