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Title: Ultra-low threshold gallium nitride photonic crystal nanobeam laser

We report exceptionally low thresholds (9.1 μJ/cm{sup 2}) for room temperature lasing at ∼450 nm in optically pumped Gallium Nitride (GaN) nanobeam cavity structures. The nanobeam cavity geometry provides high theoretical Q (>100 000) with small modal volume, leading to a high spontaneous emission factor, β = 0.94. The active layer materials are Indium Gallium Nitride (InGaN) fragmented quantum wells (fQWs), a critical factor in achieving the low thresholds, which are an order-of-magnitude lower than obtainable with continuous QW active layers. We suggest that the extra confinement of photo-generated carriers for fQWs (compared to QWs) is responsible for the excellent performance.
Authors:
; ; ;  [1] ; ;  [2] ;  [3]
  1. School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138 (United States)
  2. Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom)
  3. Rowland Institute at Harvard University, Cambridge, Massachusetts 02142 (United States)
Publication Date:
OSTI Identifier:
22412545
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 23; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CRYSTALS; GALLIUM NITRIDES; INDIUM COMPOUNDS; OPTICAL PUMPING; QUANTUM WELLS; TEMPERATURE RANGE 0273-0400 K; VISIBLE RADIATION