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Title: A reconfigurable gate architecture for Si/SiGe quantum dots

We demonstrate a reconfigurable quantum dot gate architecture that incorporates two interchangeable transport channels. One channel is used to form quantum dots, and the other is used for charge sensing. The quantum dot transport channel can support either a single or a double quantum dot. We demonstrate few-electron occupation in a single quantum dot and extract charging energies as large as 6.6 meV. Magnetospectroscopy is used to measure valley splittings in the range of 35–70 μeV. By energizing two additional gates, we form a few-electron double quantum dot and demonstrate tunable tunnel coupling at the (1,0) to (0,1) interdot charge transition.
Authors:
; ; ;  [1] ;  [1] ;  [2]
  1. Department of Physics, Princeton University, Princeton, New Jersey 08544 (United States)
  2. (United States)
Publication Date:
OSTI Identifier:
22412541
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 22; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; COUPLING; ELECTRONS; GERMANIUM SILICIDES; QUANTUM DOTS; SILICON; TUNNEL EFFECT