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Title: Electric field-induced nonlinearity enhancement in strained semi-spheroid-shaped quantum dots coupled to wetting layer

In this work, the effects of vertical electric field on the electronic and optical properties of strained semi-spheroid-shaped InAs/GaAs quantum dot (QD) coupled to its wetting layer (WL) aimed to enhance the nonlinear optical properties were investigated. The dependence of energy eigenvalues of S- and P- states and intersubband P-to-S transition energy on applied electric field was studied. A ∼∓10 meV Stark shift in the intersubband P-to-S transition energy was calculated for a semi-spheroid-shaped QD with height of 5 nm and base-length of 20 nm when bias voltage was varied from 0 V to ±0.8V. The dependence of transition dipole moment and linear and nonlinear optical properties of the system on bias voltage was also studied. It was concluded that increasing the bias voltage from -0.8V to +0.8V leads to increase in figure of merit of the system from ∼0.153 to ∼0.198.
Authors:
; ;  [1]
  1. Physics Department, Faculty of Science, Shahid Chamran University of Ahvaz, 61357-43135 (Iran, Islamic Republic of)
Publication Date:
OSTI Identifier:
22412530
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 4; Journal Issue: 12; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; DIPOLE MOMENTS; EIGENVALUES; ELECTRIC FIELDS; ELECTRIC POTENTIAL; GALLIUM ARSENIDES; INDIUM ARSENIDES; MEV RANGE; OPTICAL PROPERTIES; QUANTUM DOTS