Temperature-dependent mechanical deformation of silicon at the nanoscale: Phase transformation versus defect propagation
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Australian Capital Territory, Canberra 2601 (Australia)
This study uses high-temperature nanoindentation coupled with in situ electrical measurements to investigate the temperature dependence (25–200 °C) of the phase transformation behavior of diamond cubic (dc) silicon at the nanoscale. Along with in situ indentation and electrical data, ex situ characterizations, such as Raman and cross-sectional transmission electron microscopy, have been used to reveal the indentation-induced deformation mechanisms. We find that phase transformation and defect propagation within the crystal lattice are not mutually exclusive deformation processes at elevated temperature. Both can occur at temperatures up to 150 °C but to different extents, depending on the temperature and loading conditions. For nanoindentation, we observe that phase transformation is dominant below 100 °C but that deformation by twinning along (111) planes dominates at 150 °C and 200 °C. This work, therefore, provides clear insight into the temperature dependent deformation mechanisms in dc-Si at the nanoscale and helps to clarify previous inconsistencies in the literature.
- OSTI ID:
- 22410266
- Journal Information:
- Journal of Applied Physics, Vol. 117, Issue 20; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
The high pressure phase transformation behavior of silicon nanowires
|
journal | September 2018 |
In-situ high temperature micro-Raman investigation of annealing behavior of high-pressure phases of Si
|
journal | June 2019 |
Temperature-dependent nanoindentation response of materials
|
journal | February 2018 |
Nanoindentation Induced Deformation and Pop-in Events in a Silicon Crystal: Molecular Dynamics Simulation and Experiment
|
journal | August 2017 |
Extended Applications of the Depth-Sensing Indentation Method
|
journal | November 2020 |
Similar Records
Temperature dependent deformation mechanisms in pure amorphous silicon
Nanoscale deformation mechanism of TiC/a-C nanocomposite thin films