Inversion gate capacitance of undoped single-gate and double-gate field-effect transistor geometries in the extreme quantum limit

Journal Article · Thu May 28 00:00:00 EDT 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4907950· OSTI ID:22410265

Majumdar, Amlan ^[1]

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1. IBM Research Division, T. J. Watson Research Center, Yorktown Heights, New York 10598 (United States)

We present first-principle analytical derivations and numerically modeled data to show that the gate capacitance per unit gate area C{sub G} of extremely thin undoped-channel single-gate and double-gate field-effect transistor geometries in the extreme quantum limit with single-subband occupancy can be written as 1/C{sub G} = 1/C{sub OX} + N{sub G}/C{sub DOS} + N{sub G}/ηC{sub WF}, where N{sub G} is the number of gates, C{sub OX} is the oxide capacitance per unit area, C{sub DOS} is the density-of-states capacitance per unit area, C{sub WF} is the wave function spreading capacitance per unit area, and η is a constant on the order of 1.

• OSTI ID: 22410265
• Journal Information: Journal of Applied Physics, Vol. 117, Issue 20; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CAPACITANCE
DENSITY OF STATES
FIELD EFFECT TRANSISTORS
GATING CIRCUITS
OXIDES
QUANTUM MECHANICS
WAVE FUNCTIONS