skip to main content

SciTech ConnectSciTech Connect

Title: Effects of aluminum on epitaxial graphene grown on C-face SiC

The effects of Al layers deposited on graphene grown on C-face SiC substrates are investigated before and after subsequent annealing using low energy electron diffraction (LEED), photoelectron spectroscopy, and angle resolved photoemission. As-deposited layers appear inert. Annealing at a temperature of about 400 °C initiates migration of Al through the graphene into the graphene/SiC interface. Further annealing at temperatures from 500 °C to 700 °C induces formation of an ordered compound, producing a two domain √7× √7R19° LEED pattern and significant changes in the core level spectra that suggest formation of an Al-Si-C compound. Decomposition of this compound starts after annealing at 800 °C, and at 1000 °C, Al is no longer possible to detect at the surface. On Si-face graphene, deposited Al layers did not form such an Al-Si-C compound, and Al was still detectable after annealing above 1000 °C.
Authors:
; ; ;  [1] ;  [2]
  1. Department of Physics, Chemistry, and Biology (IFM), Linköping University, Linköping S-58183 (Sweden)
  2. MAX-lab, Lund University, Lund S-22100 (Sweden)
Publication Date:
OSTI Identifier:
22410233
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 19; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM; ANNEALING; DECOMPOSITION; ELECTRON DIFFRACTION; EPITAXY; GRAPHENE; INTERFACES; LAYERS; PHOTOELECTRON SPECTROSCOPY; PHOTOEMISSION; SILICON CARBIDES; SUBSTRATES; SURFACES; TEMPERATURE DEPENDENCE