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Title: Synthesis of graphene-like transparent conductive films on dielectric substrates using a modified filtered vacuum arc system

Here, we present a reliable process to deposit transparent conductive films on silicon oxide, quartz, and sapphire using a solid carbon source. This layer consists of partially ordered graphene flakes with a lateral dimension of about 5 nm. The process does not require any catalytic metal and exploits a high current arc evaporation (Φ-HCA) to homogeneously deposit a layer of carbon on heated substrates. A gas atmosphere consisting of Argon or Argon/Hydrogen blend acting as a buffer influences the morphology of the growing film. scanning tunneling microscopy, transmission electron microscopy, and Raman spectra were used for a thorough characterization of the samples in order to optimize the growth parameters. The best carbon layers have a surface resistance of 5.7 × 10{sup 3} Ω{sub ◻} whereas the optical transparency of the coatings is 88% with an excellent homogeneity over areas of several cm{sup 2}. Such results are compatible with most semiconductor fabrication processes and make this method very promising for various industrial applications.
Authors:
;  [1] ;  [2] ;  [3] ; ;  [4] ;  [5]
  1. Technical University of Applied Sciences Wildau, Hochschulring 1, Wildau 15745 (Germany)
  2. Arc Precision GmbH, Schwartzkopffstraße 2, Wildau 15745 (Germany)
  3. Department of Physics, University of Roma - Tor Vergata, Via della Ricerca Scientifica 1, Roma 00133 (Italy)
  4. Department of Industrial Engineering, University of Roma - Tor Vergata, and Italian Interuniversity Consortium on Materials Science and Technology (INSTM), Research Unit Roma Tor Vergata Via del Politecnico 1, Roma 00133 (Italy)
  5. IHP Innovations for High Performance Microelectronics, Im Technologiepark 25, Frankfurt (Oder) 15236 (Germany)
Publication Date:
OSTI Identifier:
22410231
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 19; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ARGON; DIELECTRIC MATERIALS; FILMS; GRAPHENE; HYDROGEN; LAYERS; MORPHOLOGY; OPACITY; QUARTZ; RAMAN SPECTRA; SAPPHIRE; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR MATERIALS; SILICON OXIDES; SOLIDS; SUBSTRATES; SURFACES; TRANSMISSION ELECTRON MICROSCOPY