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Title: Quaternary AlInGaN/InGaN quantum well on vicinal c-plane substrate for high emission intensity of green wavelengths

Electronic and optical properties of non-trivial semipolar AlInGaN/InGaN quantum well (QW) structures are investigated by using the multiband effective-mass theory and non-Markovian optical model. On vicinal c-plane GaN substrate miscut by a small angle (θ < 40°) from c-plane, the AlInGaN/InGaN system is shown to have ∼3 times larger spontaneous emission peak intensity than the conventional InGaN/GaN system at green wavelength. It is attributed to much larger optical matrix element of the quaternary AlInGaN/InGaN system, derived from the reduction of internal electric field induced by polarizations. This effect exceeds the performance-degrading factor of smaller quasi-Fermi-level separation for the quaternary AlInGaN/InGaN system than that for the conventional InGaN/GaN system. Results indicate that the use of quaternary III-nitride QWs on vicinal substrates may be beneficial in improving the performance of optical devices emitting green light.
Authors:
 [1] ; ;  [2] ; ;  [3] ; ; ;  [4]
  1. Department of Electronics Engineering, Catholic University of Daegu, Hayang, Kyeongbuk 712-702 (Korea, Republic of)
  2. Advanced Institutes of Convergence Technology, Seoul National University, Suwon (Korea, Republic of)
  3. Department of Mechanical Engineering, Ajou University, Suwon (Korea, Republic of)
  4. CAE Group, Platform Technology Lab, Samsung Advanced Institute of Technology, Samsung Street 130, Suwon, Kyeonggi-Do 443-803 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22410199
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 18; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; ELECTRIC FIELDS; ELECTRONIC STRUCTURE; FERMI LEVEL; GALLIUM NITRIDES; HETEROJUNCTIONS; INDIUM COMPOUNDS; MARKOV PROCESS; MATRIX ELEMENTS; OPTICAL MODELS; OPTICAL PROPERTIES; PERFORMANCE; POLARIZATION; QUANTUM WELLS; SUBSTRATES; VISIBLE RADIATION