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Title: Excitonic luminescence of SiGe/Si quantum wells δ-doped with boron

Low-temperature photoluminescence of undoped and moderately δ-doped Si{sub 1−x}Ge{sub x}/Si (x < 0.1) quantum wells has been studied. The influence of boron δ-layer on the excitonic luminescence and the luminescence caused by a dense electron plasma was demonstrated. The conditions under which the luminescence spectra of quantum wells are dominated by impurity-bound excitons (BE) have been established. Some unusual properties of these BE are explained in terms of type II band-offset in Si{sub 1−x}Ge{sub x}/Si (x < 0.1) quantum wells, which favors a spatial separation of electrons and holes. It is shown that the temperature dependence of an excitonic emission in the quantum wells allows to calculate the BE-related density of states and, thus, can be used for contactless estimation of the impurity concentration in quantum wells.
Authors:
; ; ;  [1] ;  [1] ;  [2] ;  [3] ;  [4]
  1. P.N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow (Russian Federation)
  2. (State University), Dolgoprudny, Moscow Region (Russian Federation)
  3. Institute for Physics of Microstructures Russian Academy of Sciences, Nizhny Novgorod (Russian Federation)
  4. (Russian Federation)
Publication Date:
OSTI Identifier:
22410198
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 18; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; BORON; CONCENTRATION RATIO; DENSITY OF STATES; DOPED MATERIALS; ELECTRONS; EMISSION SPECTRA; EXCITONS; GERMANIUM SILICIDES; HOLES; LAYERS; PHOTOLUMINESCENCE; QUANTUM WELLS; SILICON; TEMPERATURE DEPENDENCE