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Title: Light scattering by epitaxial VO{sub 2} films near the metal-insulator transition point

Experimental observation of metal-insulator transition in epitaxial films of vanadium dioxide is reported. Hemispherical angle-resolved light scattering technique is applied for statistical analysis of the phase transition processes on mesoscale. It is shown that the thermal hysteresis strongly depends on spatial frequency of surface irregularities. The transformation of scattering indicatrix depends on sample morphology and is principally different for the thin films with higher internal elastic strain and for the thicker films where this strain is suppressed by introduction of misfit dislocations. The evolution of scattering indicatrix, fractal dimension, surface power spectral density, and surface autocorrelation function demonstrates distinctive behavior which elucidates the influence of structural defects and strain on thermal hysteresis, twinning of microcrystallites, and domain formation during the phase transition.
Authors:
; ; ; ; ;  [1] ;  [2] ;  [3]
  1. Department of Physics, University of Puerto Rico, Mayaguez, Puerto Rico 00681 (United States)
  2. Department of Physics, University of Puerto Rico-Ponce, Ponce, Puerto Rico 00732 (United States)
  3. Department of Electrical and Computer Engineering, Michigan State University, East Lansing, Michigan 48824 (United States)
Publication Date:
OSTI Identifier:
22410184
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 18; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; DISLOCATIONS; EPITAXY; FRACTALS; HYSTERESIS; LIGHT SCATTERING; MORPHOLOGY; PHASE TRANSFORMATIONS; SPECTRAL DENSITY; STRAINS; SURFACES; THIN FILMS; TWINNING; VANADIUM OXIDES