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Title: Stacking order dependence of inverse spin Hall effect and anomalous Hall effect in spin pumping experiments

The dependence of the measured DC voltage on the non-magnetic material (NM) in NM/CoFeB and CoFeB/NM bilayers is studied under ferromagnetic resonance conditions in a TE{sub 011} resonant cavity. The directional change of the inverse spin Hall effect (ISHE) voltage V{sub ISHE} for the stacking order of the bilayer can separate the pure V{sub ISHE} and the anomalous Hall effect (AHE) voltage V{sub AHE} utilizing the method of addition and subtraction. The Ta and Ti NMs show a broad deviation of the spin Hall angle θ{sub ISH}, which originates from the AHE in accordance with the high resistivity of NMs. However, the Pt and Pd NMs show that the kinds of NMs with low resistivity are consistent with the previously reported θ{sub ISH} values. Therefore, the characteristics that NM should simultaneously satisfy to obtain a reasonable V{sub ISHE} value in bilayer systems are large θ{sub ISH} and low resistivity.
Authors:
; ;  [1] ; ;  [2]
  1. Division of Materials Science, Korea Basic Science Institute, Daejeon 305-806 (Korea, Republic of)
  2. Department of Materials Science and Engineering, KAIST, Daejeon 305-701 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22410105
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 17; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CAVITY RESONATORS; COBALT COMPOUNDS; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; FERROMAGNETIC RESONANCE; HALL EFFECT; IRON BORIDES; LAYERS; MAGNETIC MATERIALS; SPIN; TANTALUM; TITANIUM