Low temperature growth of Co{sub 2}MnSi films on diamond semiconductors by ion-beam assisted sputtering

Journal Article · Thu May 07 00:00:00 EDT 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4917466· OSTI ID:22410102

Nishiwaki, M.; Asano, H. ^[1]

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1. Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)

High quality Schottky junctions using Co{sub 2}MnSi/diamond heterostructures were fabricated. Low temperature growth at ∼300–400 °C by using ion-beam assisted sputtering (IBAS) was necessary to obtain abrupt Co{sub 2}MnSi/diamond interfaces. Only the Co{sub 2}MnSi films formed at ∼300–400 °C showed both saturation magnetization comparable to the bulk values and large negative anisotropic magnetoresistance, which suggests half-metallic nature of the Co{sub 2}MnSi films, of ∼0.3% at 10 K. Schottky junctions formed using the Co{sub 2}MnSi films showed clear rectification properties with rectification ratio of more than 10{sup 7} with Schottky barrier heights of ∼0.8 eV and ideality factors (n) of ∼1.2. These results indicate that Co{sub 2}MnSi films formed at ∼300–400 °C by IBAS are a promising spin source for spin injection into diamond semiconductors.

• OSTI ID: 22410102
• Journal Information: Journal of Applied Physics, Vol. 117, Issue 17; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANISOTROPY
COBALT COMPOUNDS
COMPARATIVE EVALUATIONS
DIAMONDS
ELECTRIC CONTACTS
FILMS
HETEROJUNCTIONS
INTERFACES
ION BEAMS
MAGNETIZATION
MAGNETORESISTANCE
MANGANESE SILICIDES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR MATERIALS
SPIN
SPUTTERING
TEMPERATURE DEPENDENCE