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Title: Fabrication and characterization of spin injector using a high-quality B2-ordered-Co{sub 2}FeSi{sub 0.5}Al{sub 0.5}/MgO/Si(100) tunnel contact

We successfully fabricate a (100)-orientated B2-type-Co{sub 2}FeSi{sub 0.5}Al{sub 0.5} (CFSA)/MgO/Si(100) tunnel contact that is promising for an efficient spin injector for Si channels. The MgO barrier is formed by radical oxidation of an Mg thin film deposited on a Si(100) surface at room temperature and successive radical oxygen annealing at 400 °C. The CFSA electrode is grown on the MgO barrier at 400 °C by ultrahigh-vacuum molecular beam deposition, and it exhibits a (100)-orientated columnar polycrystalline structure with a high degree (63%) of B2-order. The MgO barrier near the interface of the CFSA/MgO junction is crystallized with the (100) orientation, i.e., the spin filter effect due to the MgO barrier could be expected for this junction. A three-terminal Si-channel spin-accumulation device with a CFSA/MgO/Si(100) spin injector is fabricated, and the Hanle effect of accumulated spin polarized electrons injected from this contact to the Si channel is observed.
Authors:
; ; ;  [1] ;  [2]
  1. Imaging Science and Engineering Laboratory, Tokyo Institute of Technology, Yokohama, Kanagawa (Japan)
  2. Department of Physical Electronics, Tokyo Institute of Technology, Tokyo (Japan)
Publication Date:
OSTI Identifier:
22410074
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 17; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM COMPOUNDS; ANNEALING; COBALT COMPOUNDS; CRYSTAL STRUCTURE; DEPOSITION; ELECTRIC CONTACTS; FABRICATION; HETEROJUNCTIONS; INTERFACES; IRON SILICIDES; MAGNESIUM OXIDES; OXIDATION; POLYCRYSTALS; SEMICONDUCTOR JUNCTIONS; SILICON; SPIN ORIENTATION; SURFACES; THIN FILMS; TUNNEL EFFECT