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Title: Direct band-gap measurement on epitaxial Co{sub 2}FeAl{sub 0.5}Si{sub 0.5} Heusler-alloy films

In this study, a newly developed band-gap measurement technique has been used to characterise epitaxial Co{sub 2}FeAl{sub 0.5}Si{sub 0.5} (CFAS) films. The CFAS films were deposited on MgO(001) substrate by ultra high vacuum molecular beam epitaxy. The band-gap for the as deposited films was found to be ∼110 meV when measured at room temperature. This simple technique provides a macroscopic analysis of the half-metallic properties of a thin film. This allows for simple optimisation of growth and annealing conditions.
Authors:
 [1] ;  [2] ; ; ; ;  [3] ; ;  [1] ;  [1] ;  [4]
  1. Department of Electronics, University of York, York YO10 5DD (United Kingdom)
  2. (Saudi Arabia)
  3. Department of Physics, University of York, York YO10 5DD (United Kingdom)
  4. (Japan)
Publication Date:
OSTI Identifier:
22410064
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 17; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM SILICIDES; ANNEALING; COBALT COMPOUNDS; CRYSTAL STRUCTURE; ELECTRONIC STRUCTURE; ENERGY GAP; HEUSLER ALLOYS; IRON COMPOUNDS; MAGNESIUM OXIDES; MOLECULAR BEAM EPITAXY; SUBSTRATES; TEMPERATURE RANGE 0273-0400 K; THIN FILMS