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Title: Correlation between amplitude of spin accumulation signals investigated by Hanle effect measurement and effective junction barrier height in CoFe/MgO/n{sup +}-Si junctions

Correlation between the amplitude of the spin accumulation signals and the effective barrier height estimated from the slope of the log (RA) - t{sub MgO} plot (RA: resistance area product, t{sub MgO}: thickness of MgO tunnel barrier) in CoFe/MgO/n{sup +}-Si junctions was investigated. The amplitude of spin accumulation signals increases with increasing effective barrier heights. This increase of the amplitude of spin accumulation is originated from the increase of the spin polarization (P{sub Si}) in Si. The estimated absolute values of P{sub Si} using three-terminal Hanle signals are consistent with those estimated by four-terminal nonlocal-magnetoresistance (MR) and two-terminal local-MR. To demonstrate large spin accumulation in Si bulk band and enhance the local-MR through Si channel, these results indicate that the increase of the effective barrier height at ferromagnet/(tunnel barrier)/n{sup +}-Si junction electrode is important.
Authors:
; ; ;  [1] ;  [2] ;  [3]
  1. Corporate Research and Development Center, Toshiba Corporation, 1, Komukai-Toshiba-cho, 212-8582 Kawasaki (Japan)
  2. Graduate School of Engineering Science, Osaka University, 1-3, Machikaneyama-cho, Toyonaka city, Osaka 560-8531 (Japan)
  3. Department of Materials Science, Graduate School of Engineering, Tohoku University, Sendai 980-8579 (Japan)
Publication Date:
OSTI Identifier:
22410019
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 17; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; COBALT; CORRELATIONS; ELECTRIC CONTACTS; INTERMETALLIC COMPOUNDS; IRON; MAGNESIUM OXIDES; MAGNETORESISTANCE; SEMICONDUCTOR JUNCTIONS; SILICON; SPIN; SPIN ORIENTATION; TUNNEL EFFECT