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Title: Magneto-transport anisotropy in epitaxially grown hybrid MnAs/GaAs multilayer

Using molecular-beam epitaxy, we grew a MnAs/GaAs multilayer on a GaAs(100) substrate and compared its magneto-transport characteristics to those of a single-layer MnAs thin film. The crystal orientation of the MnAs layers in both samples was type-B. M–H measurements revealed two-fold symmetric magnetic anisotropy on the surface with the easy and hard direction of magnetization. When the current flowed along the hard direction, the MnAs/GaAs multilayer exhibited negative magnetoresistance below Curie temperature; when the current flowed along the easy direction, it turned positive. We suggest that this peculiar anisotropic magneto-transport behavior in the multilayer originated from two-dimensional carrier confinement and spin-orbit coupling.
Authors:
 [1] ; ; ;  [2]
  1. Department of Physics, Chungnam National University, Daejeon 305-764 (Korea, Republic of)
  2. Department of Physics and Astronomy, Northwestern University, Evanston, Illinois 60208 (United States)
Publication Date:
OSTI Identifier:
22409989
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 17; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANISOTROPY; COMPARATIVE EVALUATIONS; CRYSTALS; CURIE POINT; GALLIUM ARSENIDES; HETEROJUNCTIONS; LAYERS; L-S COUPLING; MAGNETIZATION; MAGNETORESISTANCE; MANGANESE ARSENIDES; MOLECULAR BEAM EPITAXY; SUBSTRATES; SURFACES; THIN FILMS; TWO-DIMENSIONAL SYSTEMS