Magneto-transport anisotropy in epitaxially grown hybrid MnAs/GaAs multilayer

Journal Article · Thu May 07 00:00:00 EDT 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4913288· OSTI ID:22409989

Cui, Y.; Lee, J. J.; Ketterson, J. B. ^[1]

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1. Department of Physics and Astronomy, Northwestern University, Evanston, Illinois 60208 (United States)

Using molecular-beam epitaxy, we grew a MnAs/GaAs multilayer on a GaAs(100) substrate and compared its magneto-transport characteristics to those of a single-layer MnAs thin film. The crystal orientation of the MnAs layers in both samples was type-B. M–H measurements revealed two-fold symmetric magnetic anisotropy on the surface with the easy and hard direction of magnetization. When the current flowed along the hard direction, the MnAs/GaAs multilayer exhibited negative magnetoresistance below Curie temperature; when the current flowed along the easy direction, it turned positive. We suggest that this peculiar anisotropic magneto-transport behavior in the multilayer originated from two-dimensional carrier confinement and spin-orbit coupling.

• OSTI ID: 22409989
• Journal Information: Journal of Applied Physics, Vol. 117, Issue 17; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANISOTROPY
COMPARATIVE EVALUATIONS
CRYSTALS
CURIE POINT
GALLIUM ARSENIDES
HETEROJUNCTIONS
LAYERS
L-S COUPLING
MAGNETIZATION
MAGNETORESISTANCE
MANGANESE ARSENIDES
MOLECULAR BEAM EPITAXY
SUBSTRATES
SURFACES
THIN FILMS
TWO-DIMENSIONAL SYSTEMS