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Title: Magnetic Random Access Memory based non-volatile asynchronous Muller cell for ultra-low power autonomous applications

Micro and nano electronic integrated circuit domain is today mainly driven by the advent of the Internet of Things for which the constraints are strong, especially in terms of power consumption and autonomy, not only during the computing phases but also during the standby or idle phases. In such ultra-low power applications, the circuit has to meet new constraints mainly linked to its changing energetic environment: long idle phases, automatic wake up, data back-up when the circuit is sporadically turned off, and ultra-low voltage power supply operation. Such circuits have to be completely autonomous regarding their unstable environment, while remaining in an optimum energetic configuration. Therefore, we propose in this paper the first MRAM-based non-volatile asynchronous Muller cell. This cell has been simulated and characterized in a very advanced 28 nm CMOS fully depleted silicon-on-insulator technology, presenting good power performance results due to an extremely efficient body biasing control together with ultra-wide supply voltage range from 160 mV up to 920 mV. The leakage current can be reduced to 154 pA thanks to reverse body biasing. We also propose an efficient standard CMOS bulk version of this cell in order to be compatible with different fabrication processes.
Authors:
;  [1] ;  [2] ;  [2] ;  [3]
  1. Univ. Grenoble Alpes, INAC-SPINTEC, F-38000 Grenoble (France)
  2. (France)
  3. Univ. Grenoble Alpes, CEA, LETI, F-38000 Grenoble (France)
Publication Date:
OSTI Identifier:
22409960
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 17; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; COMPUTERIZED SIMULATION; ELECTRIC POTENTIAL; FABRICATION; INTEGRATED CIRCUITS; LEAKAGE CURRENT; LIMITING VALUES; MEMORY DEVICES; OPERATION; PERFORMANCE; SILICON; VOLATILITY