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Title: Perpendicular magnetic anisotropy of amorphous [CoSiB/Pt]{sub N} thin films

Materials with perpendicular magnetic anisotropy (PMA) have been intensively studied for high-density nonvolatile memory such as spin-transfer-torque magnetic random access memory with low switching current density and high thermal stability. Compared with crystalline PMA multilayers, considerable works have been done on amorphous PMA multilayers because the amorphous materials are expected to have lower pinning site density as well as smaller domain wall width. This study is an overview of the PMA properties of amorphous [CoSiB/Pt]{sub N} multilayers with varying N, where the energy contribution is changed from domain wall energy to magnetostatic energy around N = 6. By measuring the field-induced domain wall motion, we obtain the creep exponent of μ = 1/4. These results in the amorphous PMA multilayers of [CoSiB/Pt]{sub N} demonstrate possible potential as a free layer for PMA-based memory devices.
Authors:
 [1] ; ; ;  [2] ; ; ;  [3]
  1. Department of Advanced Materials Engineering, Sejong University, Seoul 143-747 (Korea, Republic of)
  2. Department of Physics, Sogang University, Seoul 121-742 (Korea, Republic of)
  3. Department of Physics, Inha University, Incheon 402-751 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22409957
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 17; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; AMORPHOUS STATE; ANISOTROPY; COBALT COMPOUNDS; COMPARATIVE EVALUATIONS; CREEP; CRYSTALS; CURRENT DENSITY; DOMAIN STRUCTURE; LAYERS; MAGNETIC MATERIALS; MEMORY DEVICES; PLATINUM NITRIDES; RANDOMNESS; SILICON BORIDES; THIN FILMS; TORQUE