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Title: Effect of Ru thickness on spin pumping in Ru/Py bilayer

We report the effect of Ru thickness (t{sub Ru}) on ferromagnetic resonance (FMR) line-width of Ru(t{sub Ru})/Py(23 nm) bilayer samples grown on Si(100)/SiO{sub 2} substrates at room temperature by magnetron sputtering. The FMR line-width is found to vary linearly with frequency for all thicknesses of Ru, indicating intrinsic origin of damping. For Ru thicknesses below 15 nm, Gilbert-damping parameter, α is almost constant. We ascribe this behavior to spin back flow that is operative for Ru thicknesses lower than the spin diffusion length in Ru, λ{sub sd}. For thicknesses >15 nm (>λ{sub sd}), the damping constant increases with Ru thickness, indicating spin pumping from Py into Ru.
Authors:
; ; ; ;  [1]
  1. Department of Physics, Thin Film Laboratory, Indian Institute of Technology Delhi, New Delhi 110016 (India)
Publication Date:
OSTI Identifier:
22409920
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 17; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; DIFFUSION LENGTH; FERROMAGNETIC RESONANCE; INTERFACES; LAYERS; LINE WIDTHS; RUTHENIUM; SILICA; SILICON; SILICON OXIDES; SPIN; SPUTTERING; SUBSTRATES; TEMPERATURE RANGE 0273-0400 K; THICKNESS; THIN FILMS