An S-band high gain relativistic klystron amplifier with high phase stability

Journal Article · Sat Nov 15 00:00:00 EST 2014 · Physics of Plasmas

DOI:https://doi.org/10.1063/1.4901811· OSTI ID:22403288

Wu, Y. ^[1]; Li, Z. H.; Xu, Z.; Ma, Q. S. ^[1]; Xie, H. Q. ^[2]

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1. Institute of Applied Electronics, China Academy of Engineering Physics, Mianyang 621900 (China)
2. College of Science, Southwestern University of Science and Technology, Mianyang 621010 (China)

For the purpose of coherent high power microwave combining, an S-band high gain relativistic klystron amplifier with high phase stability is presented and studied. By the aid of 3D particle-in-cell code and circuit simulation software, the mechanism of parasitic oscillation in the device is investigated. And the RF lossy material is adopted in the simulation and experiment to suppress the oscillation. The experimental results show that with an input RF power of 10 kW, a microwave pulse with power of 1.8 GW is generated with a gain of 52.6 dB. And the relative phase difference fluctuation between output microwave and input RF signal is less than ±10° in 90 ns.

• OSTI ID: 22403288
• Journal Information: Physics of Plasmas, Vol. 21, Issue 11; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 1070-664X
• Country of Publication: United States
• Language: English

Related Subjects

70 PLASMA PHYSICS AND FUSION TECHNOLOGY
AMPLIFIERS
FLUCTUATIONS
GAIN
KLYSTRONS
MICROWAVE RADIATION
OSCILLATIONS
PHASE STABILITY
RELATIVISTIC RANGE
SIMULATION