Magnetotransport properties of a few-layer graphene-ferromagnetic metal junctions in vertical spin valve devices

Journal Article · Thu May 07 00:00:00 EDT 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4918957· OSTI ID:22403029

Entani, Shiro; Naramoto, Hiroshi; Sakai, Seiji ^[1]

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1. Advanced Science Research Center, Japan Atomic Energy Agency, 2-4 Shirakata-Shirane, Tokai, Ibaraki 319-1195 (Japan)

Magnetotransport properties were studied for the vertical spin valve devices with two junctions of permalloy electrodes and a few-layer graphene interlayer. The graphene layer was directly grown on the bottom electrode by chemical vapor deposition. X-ray photoelectron spectroscopy showed that the permalloy surface fully covered with a few-layer graphene is kept free from oxidation and contamination even after dispensing and removing photoresist. This enabled fabrication of the current perpendicular to plane spin valve devices with a well-defined interface between graphene and permalloy. Spin-dependent electron transport measurements revealed a distinct spin valve effect in the devices. The magnetotransport ratio was 0.8% at room temperature and increased to 1.75% at 50 K. Linear current-voltage characteristics and resistance increase with temperature indicated that ohmic contacts are realized at the relevant interfaces.

• OSTI ID: 22403029
• Journal Information: Journal of Applied Physics, Vol. 117, Issue 17; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CHEMICAL VAPOR DEPOSITION
ELECTRIC CONTACTS
ELECTRIC CURRENTS
FERROMAGNETIC MATERIALS
FERROMAGNETISM
GRAPHENE
INTERFACES
LAYERS
MAGNETORESISTANCE
OXIDATION
PERMALLOY
SEMICONDUCTOR JUNCTIONS
SPIN
SURFACES
TEMPERATURE RANGE 0273-0400 K
VALVES
X-RAY PHOTOELECTRON SPECTROSCOPY