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Title: Magnetotransport properties of a few-layer graphene-ferromagnetic metal junctions in vertical spin valve devices

Magnetotransport properties were studied for the vertical spin valve devices with two junctions of permalloy electrodes and a few-layer graphene interlayer. The graphene layer was directly grown on the bottom electrode by chemical vapor deposition. X-ray photoelectron spectroscopy showed that the permalloy surface fully covered with a few-layer graphene is kept free from oxidation and contamination even after dispensing and removing photoresist. This enabled fabrication of the current perpendicular to plane spin valve devices with a well-defined interface between graphene and permalloy. Spin-dependent electron transport measurements revealed a distinct spin valve effect in the devices. The magnetotransport ratio was 0.8% at room temperature and increased to 1.75% at 50‚ÄČK. Linear current-voltage characteristics and resistance increase with temperature indicated that ohmic contacts are realized at the relevant interfaces.
Authors:
; ;  [1]
  1. Advanced Science Research Center, Japan Atomic Energy Agency, 2-4 Shirakata-Shirane, Tokai, Ibaraki 319-1195 (Japan)
Publication Date:
OSTI Identifier:
22403029
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 17; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CHEMICAL VAPOR DEPOSITION; ELECTRIC CONTACTS; ELECTRIC CURRENTS; FERROMAGNETIC MATERIALS; FERROMAGNETISM; GRAPHENE; INTERFACES; LAYERS; MAGNETORESISTANCE; OXIDATION; PERMALLOY; SEMICONDUCTOR JUNCTIONS; SPIN; SURFACES; TEMPERATURE RANGE 0273-0400 K; VALVES; X-RAY PHOTOELECTRON SPECTROSCOPY