Single trap in liquid gated nanowire FETs: Capture time behavior as a function of current
- Peter Grünberg Institute (PGI-8), Forschungszentrum Jülich, 52425 Jülich (Germany)
The basic reason for enhanced electron capture time, τ{sub c}, of the oxide single trap dependence on drain current in the linear operation regime of p{sup +}-p-p{sup +} silicon field effect transistors (FETs) was established, using a quantum-mechanical approach. A strong increase of τ{sub c} slope dependence on channel current is explained using quantization and tunneling concepts in terms of strong field dependence of the oxide layer single trap effective cross-section, which can be described by an amplification factor. Physical interpretation of this parameter deals with the amplification of the electron cross-section determined by both decreasing the critical field influence as a result of the minority carrier depletion and the potential barrier growth for electron capture. For the NW channel of n{sup +}-p-n{sup +} FETs, the experimentally observed slope of τ{sub c} equals (−1). On the contrary, for the case of p{sup +}-p-p{sup +} Si FETs in the accumulation regime, the experimentally observed slope of τ{sub c} equals (−2.8). It can be achieved when the amplification factor is about 12. Extraordinary high capture time slope values versus current are explained by the effective capture cross-section growth with decreasing electron concentration close to the nanowire-oxide interface.
- OSTI ID:
- 22403001
- Journal Information:
- Journal of Applied Physics, Vol. 117, Issue 17; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
GENERAL PHYSICS
AMPLIFICATION
CONCENTRATION RATIO
CRITICAL FIELD
CROSS SECTIONS
ELECTRIC CURRENTS
ELECTRON CAPTURE
ELECTRONS
FIELD EFFECT TRANSISTORS
INTERFACES
LAYERS
LIQUIDS
NANOWIRES
OXIDES
PHOSPHORUS IONS
POTENTIALS
QUANTIZATION
QUANTUM MECHANICS
SILICON
TRAPS
TUNNEL EFFECT