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Title: Single trap in liquid gated nanowire FETs: Capture time behavior as a function of current

The basic reason for enhanced electron capture time, τ{sub c}, of the oxide single trap dependence on drain current in the linear operation regime of p{sup +}-p-p{sup +} silicon field effect transistors (FETs) was established, using a quantum-mechanical approach. A strong increase of τ{sub c} slope dependence on channel current is explained using quantization and tunneling concepts in terms of strong field dependence of the oxide layer single trap effective cross-section, which can be described by an amplification factor. Physical interpretation of this parameter deals with the amplification of the electron cross-section determined by both decreasing the critical field influence as a result of the minority carrier depletion and the potential barrier growth for electron capture. For the NW channel of n{sup +}-p-n{sup +} FETs, the experimentally observed slope of τ{sub c} equals (−1). On the contrary, for the case of p{sup +}-p-p{sup +} Si FETs in the accumulation regime, the experimentally observed slope of τ{sub c} equals (−2.8). It can be achieved when the amplification factor is about 12. Extraordinary high capture time slope values versus current are explained by the effective capture cross-section growth with decreasing electron concentration close to the nanowire-oxide interface.
Authors:
 [1] ;  [2] ; ;  [1]
  1. Peter Grünberg Institute (PGI-8), Forschungszentrum Jülich, 52425 Jülich (Germany)
  2. (Armenia)
Publication Date:
OSTI Identifier:
22403001
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 17; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; AMPLIFICATION; CONCENTRATION RATIO; CRITICAL FIELD; CROSS SECTIONS; ELECTRIC CURRENTS; ELECTRON CAPTURE; ELECTRONS; FIELD EFFECT TRANSISTORS; INTERFACES; LAYERS; LIQUIDS; NANOWIRES; OXIDES; PHOSPHORUS IONS; POTENTIALS; QUANTIZATION; QUANTUM MECHANICS; SILICON; TRAPS; TUNNEL EFFECT