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Title: Ultimate response time of high electron mobility transistors

We present theoretical studies of the response time of the two-dimensional gated electron gas to femtosecond pulses. Our hydrodynamic simulations show that the device response to a short pulse or a step-function signal is either smooth or oscillating time-decay at low and high mobility, μ, values, respectively. At small gate voltage swings, U{sub 0} = U{sub g} − U{sub th}, where U{sub g} is the gate voltage and U{sub th} is the threshold voltage, such that μU{sub 0}/L < v{sub s}, where L is the channel length and v{sub s} is the effective electron saturation velocity, the decay time in the low mobility samples is on the order of L{sup 2}/(μU{sub 0}), in agreement with the analytical drift model. However, the decay is preceded by a delay time on the order of L/s, where s is the plasma wave velocity. This delay is the ballistic transport signature in collision-dominated devices, which becomes important during very short time periods. In the high mobility devices, the period of the decaying oscillations is on the order of the plasma wave velocity transit time. Our analysis shows that short channel field effect transistors operating in the plasmonic regime can meet the requirements for applications as terahertz detectors, mixers, delay lines,more » and phase shifters in ultra high-speed wireless communication circuits.« less
Authors:
;  [1] ;  [2]
  1. U.S. Army Research Laboratory, Adelphi, Maryland 20783 (United States)
  2. Rensselaer Polytechnic Institute, Troy, New York 12180 (United States)
Publication Date:
OSTI Identifier:
22402998
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 17; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ELECTRIC POTENTIAL; ELECTROMAGNETIC PULSES; ELECTRON GAS; ELECTRON MOBILITY; ELECTRONS; FIELD EFFECT TRANSISTORS; OSCILLATIONS; PHASE SHIFT; PLASMA WAVES; PLASMONS; THZ RANGE; TIME DELAY; TWO-DIMENSIONAL SYSTEMS; VELOCITY