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Title: Elastic tunneling charge transport mechanisms in silicon quantum dots /SiO{sub 2} thin films and superlattices

The role of different charge transport mechanisms in Si/SiO{sub 2} structures has been studied. A theoretical model based on the Transfer Hamiltonian Formalism has been developed to explain experimental current trends in terms of three different elastic tunneling processes: (1) trap assisted tunneling; (2) transport through an intermediate quantum dot; and (3) direct tunneling between leads. In general, at low fields carrier transport is dominated by the quantum dots whereas, for moderate and high fields, transport through deep traps inherent to the SiO{sub 2} is the most relevant process. Besides, current trends in Si/SiO{sub 2} superlattice structure have been properly reproduced.
Authors:
; ;  [1]
  1. MIND/IN2UB Departament d'Electrònica, Universitat de Barcelona, C/Martí i Franquès 1, E-08028 Barcelona (Spain)
Publication Date:
OSTI Identifier:
22402994
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 17; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 77 NANOSCIENCE AND NANOTECHNOLOGY; CHARGE CARRIERS; CHARGE TRANSPORT; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; HAMILTONIANS; INTERFACES; QUANTUM DOTS; SILICON; SILICON OXIDES; SUPERLATTICES; THIN FILMS; TRAPS; TUNNEL EFFECT