skip to main content

Title: Spin pumping and inverse spin Hall effects—Insights for future spin-orbitronics (invited)

Quantification of spin-charge interconversion has become increasingly important in the fast-developing field of spin-orbitronics. Pure spin current generated by spin pumping acts as a sensitive probe for many bulk and interface spin-orbit effects, which has been indispensable for the discovery of many promising new spin-orbit materials. We apply spin pumping and inverse spin Hall effect experiments, as a useful metrology, and study spin-orbit effects in a variety of metals and metal interfaces. We quantify the spin Hall effects in Ir and W using the conventional bilayer structures and discuss the self-induced voltage in a single layer of ferromagnetic permalloy. Finally, we extend our discussions to multilayer structures and quantitatively reveal the spin current flow in two consecutive normal metal layers.
Authors:
; ; ; ; ;  [1] ; ;  [2]
  1. Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439 (United States)
  2. Department of Physics and Astronomy, Northwestern University, Evanston, Illinois 60208 (United States)
Publication Date:
OSTI Identifier:
22402970
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 17; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ELECTRIC POTENTIAL; FERROMAGNETIC MATERIALS; FERROMAGNETISM; HALL EFFECT; INTERFACES; IRIDIUM; LAYERS; L-S COUPLING; PERMALLOY; PUMPING; SPIN; TUNGSTEN