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Title: Effect of hole transport on performance of infrared type-II superlattice light emitting diodes

The effect of hole transport on the performance of infrared light emitting diodes (LED) was investigated. The active area of the LEDs comprised two type-II superlattices with different periods and widths connected in series. Electroluminescence spectra of the devices with different positions of long wave and mid wave superlattice sections were mostly contributed by the superlattice closest to the p-contact. The experimental results indicate that due to suppressed vertical hole transport, the recombination of electrically injected electrons and holes in a type II superlattice LED active region takes place within a few superlattice periods near p-barrier. Possible reason for the effect is reduction of hole diffusion coefficient in an active area of a superlattice LED under bias.
Authors:
; ; ; ; ; ;  [1] ;  [2]
  1. Department of Electrical Engineering, Stony Brook University, Stony Brook, New York 11794 (United States)
  2. Power Photonic Corp., 25 Health Sciences Dr., Stony Brook, New York 11790 (United States)
Publication Date:
OSTI Identifier:
22402953
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 16; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; DIFFUSION; ELECTROLUMINESCENCE; ELECTRONS; EMISSION SPECTRA; HOLES; INFRARED RADIATION; LIGHT EMITTING DIODES; PERFORMANCE; RECOMBINATION; SUPERLATTICES