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Title: Dielectric function in the spectral range (0.5–8.5)eV of an (Al{sub x}Ga{sub 1−x}){sub 2}O{sub 3} thin film with continuous composition spread

We determined the dielectric function of the alloy system (Al{sub x}Ga{sub 1−x}){sub 2}O{sub 3} by spectroscopic ellipsometry in the wide spectral range from 0.5 eV to 8.5 eV and for Al contents ranging from x = 0.11 to x = 0.55. For the composition range x < 0.4, we observe single phase material in the β-modification and for larger Al content also the occurrence of γ-(Al,Ga){sub 2}O{sub 3}. We derived spectra of the refractive index and the absorption coefficient as well as energy parameters of electronic band-band transitions by model analysis of the dielectric function. The dependence of the dielectric functions lineshape and the energy parameters on x is highly continuous, reflecting theoretical expectations. The data presented here provide a basis for a deeper understanding of the electronic properties of this material system and may be useful for device engineering.
Authors:
; ; ; ; ;  [1]
  1. Fakultät für Physik und Geowissenschaften, Institut für Experimentelle Physik II, Universität Leipzig, Linnéstr. 5, D-04103 Leipzig (Germany)
Publication Date:
OSTI Identifier:
22402952
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 16; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ABSORPTION; ALLOY SYSTEMS; ALUMINIUM OXIDES; CONCENTRATION RATIO; DIELECTRIC MATERIALS; ELECTRONIC STRUCTURE; ELLIPSOMETRY; ENERGY SPECTRA; EV RANGE; GALLIUM OXIDES; MODIFICATIONS; PERMITTIVITY; REFRACTIVE INDEX; THIN FILMS