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Title: Surface modification of multilayer graphene using Ga ion irradiation

The effect of Ga ion irradiation intensity on the surface of multilayer graphene was examined. Using Raman spectroscopy, we determined that the irradiation caused defects in the crystal structure of graphene. The density of defects increased with the increase in dwell times. Furthermore, the strain induced by the irradiation changed the crystallite size and the distance between defects. These defects had the effect of doping the multilayer graphene and increasing its work function. The increase in work function was determined using contact potential difference measurements. The surface morphology of the multilayer graphene changed following irradiation as determined by atomic force microscopy. Additionally, the adhesion between the atomic force microscopy tip and sample increased further indicating that the irradiation had caused surface modification, important for devices that incorporate graphene.
Authors:
 [1] ;  [2] ; ; ;  [1] ;  [1] ;  [2]
  1. School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China)
  2. (China)
Publication Date:
OSTI Identifier:
22402948
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 16; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ADHESION; ATOMIC FORCE MICROSCOPY; CRYSTAL STRUCTURE; DENSITY; GALLIUM IONS; GRAPHENE; IRRADIATION; LAYERS; MODIFICATIONS; MORPHOLOGY; PHYSICAL RADIATION EFFECTS; POTENTIALS; RAMAN SPECTROSCOPY; STRAINS; SURFACES; WORK FUNCTIONS