skip to main content

Title: Non-equilibrium Green's functions study of discrete dopants variability on an ultra-scaled FinFET

In this paper, we study the effect of random discrete dopants on the performance of a 6.6 nm channel length silicon FinFET. The discrete dopants have been distributed randomly in the source/drain region of the device. Due to the small dimensions of the FinFET, a quantum transport formalism based on the non-equilibrium Green's functions has been deployed. The transfer characteristics for several devices that differ in location and number of dopants have been calculated. Our results demonstrate that discrete dopants modify the effective channel length and the height of the source/drain barrier, consequently changing the channel control of the charge. This effect becomes more significant at high drain bias. As a consequence, there is a strong effect on the variability of the on-current, off-current, sub-threshold slope, and threshold voltage. Finally, we have also calculated the mean and standard deviation of these parameters to quantify their variability. The obtained results show that the variability at high drain bias is 1.75 larger than at low drain bias. However, the variability of the on-current, off-current, and sub-threshold slope remains independent of the drain bias. In addition, we have found that a large source to drain current by tunnelling current occurs at low gate bias.
Authors:
;  [1] ;  [2]
  1. Electronic Systems Design Centre, College of Engineering, Swansea University, Swansea SA2 8PP (United Kingdom)
  2. School of Engineering, University of Glasgow, Glasgow G12 8LT (United Kingdom)
Publication Date:
OSTI Identifier:
22402944
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 16; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; DOPED MATERIALS; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; EQUILIBRIUM; FIELD EFFECT TRANSISTORS; GREEN FUNCTION; RANDOMNESS; SILICON; TUNNEL EFFECT