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Title: Investigation of point and extended defects in electron irradiated silicon—Dependence on the particle energy

This work is focusing on generation, time evolution, and impact on the electrical performance of silicon diodes impaired by radiation induced active defects. n-type silicon diodes had been irradiated with electrons ranging from 1.5 MeV to 27 MeV. It is shown that the formation of small clusters starts already after irradiation with high fluence of 1.5 MeV electrons. An increase of the introduction rates of both point defects and small clusters with increasing energy is seen, showing saturation for electron energies above ∼15 MeV. The changes in the leakage current at low irradiation fluence-values proved to be determined by the change in the configuration of the tri-vacancy (V{sub 3}). Similar to V{sub 3}, other cluster related defects are showing bistability indicating that they might be associated with larger vacancy clusters. The change of the space charge density with irradiation and with annealing time after irradiation is fully described by accounting for the radiation induced trapping centers. High resolution electron microscopy investigations correlated with the annealing experiments revealed changes in the spatial structure of the defects. Furthermore, it is shown that while the generation of point defects is well described by the classical Non Ionizing Energy Loss (NIEL), the formation of small defect clusters ismore » better described by the “effective NIEL” using results from molecular dynamics simulations.« less
Authors:
; ;  [1] ; ;  [2] ;  [3]
  1. National Institute of Materials Physics, Atomistilor 105 bis, Magurele 077125 (Romania)
  2. Institute for Experimental Physics, University of Hamburg, D-22761 Hamburg (Germany)
  3. Belarusian State University, Independence Ave. 4, 220030 Minsk (Belarus)
Publication Date:
OSTI Identifier:
22402942
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 16; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ANNEALING; COMPUTERIZED SIMULATION; ELECTRON MICROSCOPY; ELECTRONS; ENERGY LOSSES; IRRADIATION; LEAKAGE CURRENT; MEV RANGE; MOLECULAR DYNAMICS METHOD; N-TYPE CONDUCTORS; PHYSICAL RADIATION EFFECTS; SILICON; SILICON DIODES; SPACE CHARGE; VACANCIES