skip to main content

Title: Three-point bending analysis of doubly clamped silicon nanowire beams; Young's modulus, initial stress, and crystal orientation

A non-linear model is introduced describing the force-deflection relation of doubly clamped beams, including initial stress. Several approximations for the exact model are developed and compared, revealing the importance of considering the initial stress during 3-point bending measurements analysis. A novel approximation is found to be better than others, and both the exact model and this approximation are in perfect agreement with finite element simulations. A brief experimental example of silicon nanowires is presented in which the Young's modulus, the initial stress, and the crystallographic growth orientation are extracted by 3-point bending analysis.
Authors:
; ; ;  [1]
  1. Department of Electrical Engineering, Technion, Haifa 32000 (Israel)
Publication Date:
OSTI Identifier:
22402938
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 16; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; APPROXIMATIONS; BENDING; COMPARATIVE EVALUATIONS; COMPUTERIZED SIMULATION; CRYSTAL GROWTH; CRYSTAL STRUCTURE; CRYSTALS; FINITE ELEMENT METHOD; MATHEMATICAL MODELS; NANOWIRES; NONLINEAR PROBLEMS; ORIENTATION; SILICON; STRESSES