Three-point bending analysis of doubly clamped silicon nanowire beams; Young's modulus, initial stress, and crystal orientation

Journal Article · Tue Apr 28 00:00:00 EDT 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4919017· OSTI ID:22402938

Calahorra, Y.; Shtempluck, O.; Kotchetkov, V. ^[1]

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1. Department of Electrical Engineering, Technion, Haifa 32000 (Israel)

A non-linear model is introduced describing the force-deflection relation of doubly clamped beams, including initial stress. Several approximations for the exact model are developed and compared, revealing the importance of considering the initial stress during 3-point bending measurements analysis. A novel approximation is found to be better than others, and both the exact model and this approximation are in perfect agreement with finite element simulations. A brief experimental example of silicon nanowires is presented in which the Young's modulus, the initial stress, and the crystallographic growth orientation are extracted by 3-point bending analysis.

• OSTI ID: 22402938
• Journal Information: Journal of Applied Physics, Vol. 117, Issue 16; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
APPROXIMATIONS
BENDING
COMPARATIVE EVALUATIONS
COMPUTERIZED SIMULATION
CRYSTAL GROWTH
CRYSTAL STRUCTURE
CRYSTALS
FINITE ELEMENT METHOD
MATHEMATICAL MODELS
NANOWIRES
NONLINEAR PROBLEMS
ORIENTATION
SILICON
STRESSES