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Title: Growth of tapered silica nanowires with a shallow U-shaped vapor chamber: Growth mechanism and structural and optical properties

Traditional chemical vapor deposition method modified with a shallow U-shaped vapor chamber has been used to synthesize tapered bamboo shoot-like (BS-like) amorphous SiO{sub 2} nanowires (NWs) on Si (100) substrates without catalyst. The key innovation of this approach lies in a creation of swirling flow of the reactant vapors during the growth, which leads to a harvest of tapered silica NWs with lengths up to several microns. The unique structures and corresponding luminescence properties of the BS-like NWs were studied and their relationship with the evaporated active reactants was explored. A thermodynamic model that considers the critical role of the vapor flow during the growth is proposed to understand the structural and optical features. The shallow U-shaped vapor chamber-aided approach may provide a viable way to tailor novel structure of NWs for potential applications in nano-devices.
Authors:
; ; ; ;  [1] ;  [2]
  1. Department of Physics, Sichuan University, Chengdu 610064 (China)
  2. (China)
Publication Date:
OSTI Identifier:
22402930
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 16; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; CRYSTAL STRUCTURE; LUMINESCENCE; NANOWIRES; OPTICAL PROPERTIES; SILICA; SILICON; SILICON OXIDES; SUBSTRATES; THERMODYNAMICS; VAPORS; VORTEX FLOW