The atomic details of the interfacial interaction between the bottom electrode of Al/AlO{sub x}/Al Josephson junctions and HF-treated Si substrates

Journal Article · Tue Apr 28 00:00:00 EDT 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4919224· OSTI ID:22402920

Zeng, L. J.; Nik, S.; Olsson, E. ^[1]; Krantz, P.; Delsing, P. ^[2]

---

1. Department of Applied Physics, Chalmers University of Technology, 412 96 Gothenburg (Sweden)
2. Department of Microtechnology and Nanoscience, Chalmers University of Technology, 412 96 Gothenburg (Sweden)

The interface between the Al bottom contact layer and Si substrates in Al based Josephson junctions is believed to have a significant effect on the noise observed in Al based superconducting devices. We have studied the atomic structure of it by transmission electron microscopy. An amorphous layer with a thickness of ∼5 nm was found between the bottom Al electrode and HF-treated Si substrate. It results from intermixing between Al, Si, and O. We also studied the chemical bonding states among the different species using energy loss near edge structure. The observations are of importance for the understanding of the origin of decoherence mechanisms in qubits based on these junctions.

• OSTI ID: 22402920
• Journal Information: Journal of Applied Physics, Vol. 117, Issue 16; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ALUMINIUM
ALUMINIUM OXIDES
CHEMICAL BONDS
ELECTRODES
ENERGY LOSSES
INTERFACES
JOSEPHSON JUNCTIONS
LAYERS
QUBITS
SILICON
SUBSTRATES
SUPERCONDUCTING DEVICES
TRANSMISSION ELECTRON MICROSCOPY