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Title: The atomic details of the interfacial interaction between the bottom electrode of Al/AlO{sub x}/Al Josephson junctions and HF-treated Si substrates

The interface between the Al bottom contact layer and Si substrates in Al based Josephson junctions is believed to have a significant effect on the noise observed in Al based superconducting devices. We have studied the atomic structure of it by transmission electron microscopy. An amorphous layer with a thickness of ∼5 nm was found between the bottom Al electrode and HF-treated Si substrate. It results from intermixing between Al, Si, and O. We also studied the chemical bonding states among the different species using energy loss near edge structure. The observations are of importance for the understanding of the origin of decoherence mechanisms in qubits based on these junctions.
Authors:
; ;  [1] ; ;  [2]
  1. Department of Applied Physics, Chalmers University of Technology, 412 96 Gothenburg (Sweden)
  2. Department of Microtechnology and Nanoscience, Chalmers University of Technology, 412 96 Gothenburg (Sweden)
Publication Date:
OSTI Identifier:
22402920
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 16; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALUMINIUM; ALUMINIUM OXIDES; CHEMICAL BONDS; ELECTRODES; ENERGY LOSSES; INTERFACES; JOSEPHSON JUNCTIONS; LAYERS; QUBITS; SILICON; SUBSTRATES; SUPERCONDUCTING DEVICES; TRANSMISSION ELECTRON MICROSCOPY