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Title: Model for conductivity compensation of moderately doped n- and p-4H-SiC by high-energy electron bombardment

The model of conductivity compensation in SiC under irradiation with high-energy electrons is presented. The following processes are considered to cause a decrease in the free carrier concentration: (i) formation of deep traps by intrinsic point defects, Frenkel pairs produced by irradiation; (ii) 'deactivation' of the dopant via formation of neutral complexes including a dopant atom and a radiation-induced point defect; and (iii) formation of deep compensating traps via generation of charged complexes constituted by a dopant atom and a radiation-induced point defect. To determine the compensation mechanism, dose dependences of the deep compensation of moderately doped SiC (CVD) under electron irradiation have been experimentally studied. It is demonstrated that, in contrast to n-FZ-Si, moderately doped SiC (CVD) exhibits linear dependences (with a strongly nonlinear dependence observed for Si). Therefore, the conductivity compensation in silicon carbide under electron irradiation occurs due to deep traps formed by primary radiation defects (vacancies and interstitial atoms) in the silicon and carbon sublattices. It is known that the compensation in silicon is due to the formation of secondary radiation defects that include a dopant atom. It is shown that, in contrast to n-SiC (CVD), primary defects in only the carbon sublattice of moderately dopedmore » p-SiC (CVD) cannot account for the compensation process. In p-SiC, either primary defects in the silicon sublattice or defects in both sublattices are responsible for the conductivity compensation.« less
Authors:
 [1] ; ;  [2]
  1. Department of Experimental Physics, St. Petersburg State Polytechnic University, Polytekhnicheskaya 29, St. Petersburg 195251 (Russian Federation)
  2. Ioffe Physical-Technical Institute, Russian Academy of Sciences, Polytekhnicheskaya 26, St. Petersburg 194021 (Russian Federation)
Publication Date:
OSTI Identifier:
22402898
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 15; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CARBON; CHEMICAL VAPOR DEPOSITION; CONCENTRATION RATIO; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRON BEAMS; ELECTRONS; IRRADIATION; NONLINEAR PROBLEMS; N-TYPE CONDUCTORS; PHYSICAL RADIATION EFFECTS; P-TYPE CONDUCTORS; SILICON; SILICON CARBIDES; TRAPS; VACANCIES